Highly reflective and passivated ohmic contacts in p-Ge by laser processing of aSiCx:H(i)/Al2O3/aSiC films for thermophotovoltaic applications

by on 26 de febrer de 2024 with No hi ha comentaris
  • Gamel, M., López, G., Medrano, A. M., Jiménez, A., Datas, A., Garín, M., & Martín, I. (2024). Highly reflective and passivated ohmic contacts in p-Ge by laser processing of aSiCx:H(i)/Al2O3/aSiC films for thermophotovoltaic applications. Solar Energy Materials and Solar Cells, 265. https://doi.org/10.1016/j.solmat.2023.112622

Deixa un comentari

L'adreça electrònica no es publicarà. Els camps necessaris estan marcats amb *