N+p Junctions in p-type c-Ge based on annealed phosphorous-doped nanocrystalline silicon films

by on 26 de gener de 2026 with No hi ha comentaris
  • Rivera, G., Gamel, M., Tuneu, N., López, G., Garín, M., & Martín, I. (2026). N+p Junctions in p-type c-Ge based on annealed phosphorous-doped nanocrystalline silicon films. Applied Surface Science, 717 Article 164750. https://doi.org/10.1016/j.apsusc.2025.164750

Deixa un comentari

L'adreça electrònica no es publicarà. Els camps necessaris estan marcats amb *