- Martin, I., Lopez, G., Garin, M., Vez, C., Ortega, P., & Puigdollers, J. (2022). Effect of the thickness of amorphous silicon carbide interlayer on the passivation of c-Ge surface by aluminium oxide films. Surfaces and Interfaces, 31, Article 102070. https://doi.org/10.1016/j.surfin.2022.102070
Effect of the thickness of amorphous silicon carbide interlayer on the passivation of c-Ge surface by aluminium oxide films
on 6 de juliol de 2022
with No hi ha comentaris
Deixa un comentari