Effect of the thickness of amorphous silicon carbide interlayer on the passivation of c-Ge surface by aluminium oxide films

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  • Martin, I., Lopez, G., Garin, M., Vez, C., Ortega, P., & Puigdollers, J. (2022). Effect of the thickness of amorphous silicon carbide interlayer on the passivation of c-Ge surface by aluminium oxide films. Surfaces and Interfaces, 31, Article 102070. https://doi.org/10.1016/j.surfin.2022.102070

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